ABSTRACT The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly

enriched the materials base of two-dimensional electron systems (2DESs)1,2,3,4,5. Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES.

The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate6,7; the graphite gate screens the impurity potential in

the 2DES and brings the carrier Hall mobility up to 6,000 cm2 V−1 s−1. The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the

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support SIMILAR CONTENT BEING VIEWED BY OTHERS QUANTUM HALL EFFECT IN A CVD-GROWN OXIDE Article Open access 20 November 2024 RASHBA VALLEYS AND QUANTUM HALL STATES IN FEW-LAYER BLACK ARSENIC

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Scholar  Download references ACKNOWLEDGEMENTS We thank A. Hamilton, L. Yang for helpful discussions. We also thank S. Hannahs, T. Murphy, E. Sang Choi, D. Graf, J. Billings, B. Pullum, L.

Balicas, L. Pi, C. Xi for help with measurements in DC high magnetic fields, J. Wang, Z. Xia for help with measurements in pulsed magnetic fields, and P. Kim, X. Liu, L. Wang for help with

the dry-transfer technique. A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by National Science Foundation Cooperative Agreement no.

DMR-1157490, the State of Florida, and the US Department of Energy. A portion of this work was performed on the Steady High Magnetic Field Facilities, High Magnetic Field Laboratory, CAS.

Measurements in pulsed magnetic field were carried out at Wuhan National High Magnetic Field Center, China. Part of the sample fabrication was conducted at Fudan Nano-fabrication Lab. L.L.,

F. Y. and Y.Z. acknowledge support from NSF of China (grant nos. 11425415 and 11421404) and National Basic Research Program of China (973 Program; grant no. 2013CB921902). L.L. and Y.Z. also

acknowledge support from Samsung Global Research Outreach (GRO) Program. G.J.Y and X.H.C. acknowledge support from the ‘Strategic Priority Research Program’ of the Chinese Academy of

Sciences (grant no. XDB04040100), the National Basic Research Program of China (973 Program; grant no. 2012CB922002) and NSF of China. Z.Z. and Y.W. are supported by Ministry of Science and

Technology of China (grant no. 2015CB921000). W.L. and K.C. acknowledge support from NSF of China (grant no. 11434010). K.W. and T.T. acknowledge support from the Elemental Strategy

Initiative conducted by the MEXT, Japan. T.T. also acknowledges support by a Grant-in-Aid for Scientific Research on Innovative Areas, ‘Nano Informatics’ (grant nos. 262480621 and 25106006)

from JSPS. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China Likai Li, Fangyuan Yang 

& Yuanbo Zhang * Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China Likai Li, Fangyuan Yang, Guo Jun Ye, Xian Hui Chen & Yuanbo Zhang * Hefei

National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, 230026, Anhui, China Guo Jun Ye & Xian Hui Chen *

Key Laboratory of Strongly Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, 230026, Anhui, China Guo Jun Ye & Xian Hui Chen * Department of Physics,

State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China Zuocheng Zhang & Yayu Wang * Wuhan National High Magnetic Field Center and School of

Physics, Huazhong University of Science and Technology, Wuhan, 430074, China Zengwei Zhu & Liang Li * SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912,

Beijing, 100083, China Wenkai Lou, Xiaoying Zhou & Kai Chang * Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China,

Hefei, 230026, Anhui, China Wenkai Lou, Xiaoying Zhou & Kai Chang * Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan Kenji

Watanabe & Takashi Taniguchi Authors * Likai Li View author publications You can also search for this author inPubMed Google Scholar * Fangyuan Yang View author publications You can also

search for this author inPubMed Google Scholar * Guo Jun Ye View author publications You can also search for this author inPubMed Google Scholar * Zuocheng Zhang View author publications

You can also search for this author inPubMed Google Scholar * Zengwei Zhu View author publications You can also search for this author inPubMed Google Scholar * Wenkai Lou View author

publications You can also search for this author inPubMed Google Scholar * Xiaoying Zhou View author publications You can also search for this author inPubMed Google Scholar * Liang Li View

author publications You can also search for this author inPubMed Google Scholar * Kenji Watanabe View author publications You can also search for this author inPubMed Google Scholar *

Takashi Taniguchi View author publications You can also search for this author inPubMed Google Scholar * Kai Chang View author publications You can also search for this author inPubMed 

Google Scholar * Yayu Wang View author publications You can also search for this author inPubMed Google Scholar * Xian Hui Chen View author publications You can also search for this author

inPubMed Google Scholar * Yuanbo Zhang View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS L.L. and F.Y. fabricated the black phosphorus

devices, performed transport measurements and analysed the data. Z. Z. helped with the sample fabrication and transport measurements. G.J.Y. and X.H.C. grew the bulk black phosphorus

crystals. Z.Z. and L.L. helped with the measurements in a pulsed high magnetic field. W.L., X.Z. and K.C. did theoretical calculations. K.W. and T. T. grew the bulk hBN. Y.Z., X.H.C. and

Y.W. co-supervised the project. L.L., F.Y. and Y.Z. wrote the paper with input from all authors. CORRESPONDING AUTHORS Correspondence to Xian Hui Chen or Yuanbo Zhang. ETHICS DECLARATIONS

COMPETING INTERESTS The authors declare no competing financial interests. SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Supplementary information (PDF 2659 kb) RIGHTS AND PERMISSIONS

Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Li, L., Yang, F., Ye, G. _et al._ Quantum Hall effect in black phosphorus two-dimensional electron system. _Nature Nanotech_ 11,

593–597 (2016). https://doi.org/10.1038/nnano.2016.42 Download citation * Received: 19 May 2015 * Accepted: 19 February 2016 * Published: 28 March 2016 * Issue Date: July 2016 * DOI:

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