Topological transistor | Nature Physics

Topological transistor | Nature Physics

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Access through your institution Buy or subscribe _Science_ http://doi.org/xks (2014) Quantum spin Hall insulators form a class of materials that are insulating in the bulk, but have conducting edge states. As topological protection prevents backscattering in such states, spin and charge transport should occur without dissipation, which could be used to create low-power devices. Xiaofeng Qian and co-workers have now proposed a transistor that operates by switching the topological behaviour of these materials on and off. This is a preview of subscription content, access via your institution ACCESS OPTIONS Access through your institution Subscribe to this journal Receive 12 print issues and online access $259.00 per year only $21.58 per issue Learn more Buy this article * Purchase on SpringerLink * Instant access to full article PDF Buy now Prices may be subject to local taxes which are calculated during checkout ADDITIONAL ACCESS OPTIONS: * Log in * Learn about institutional subscriptions * Read our FAQs * Contact customer support Authors * Luke Fleet View author publications You can also search for this author inPubMed Google Scholar RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Fleet, L. Topological transistor. _Nature Phys_ 11, 5 (2015). https://doi.org/10.1038/nphys3217 Download citation * Published: 23 December 2014 * Issue Date: January 2015 * DOI: https://doi.org/10.1038/nphys3217 SHARE THIS ARTICLE Anyone you share the following link with will be able to read this content: Get shareable link Sorry, a shareable link is not currently available for this article. Copy to clipboard Provided by the Springer Nature SharedIt content-sharing initiative

Access through your institution Buy or subscribe _Science_ http://doi.org/xks (2014) Quantum spin Hall insulators form a class of materials that are insulating in the bulk, but have


conducting edge states. As topological protection prevents backscattering in such states, spin and charge transport should occur without dissipation, which could be used to create low-power


devices. Xiaofeng Qian and co-workers have now proposed a transistor that operates by switching the topological behaviour of these materials on and off. This is a preview of subscription


content, access via your institution ACCESS OPTIONS Access through your institution Subscribe to this journal Receive 12 print issues and online access $259.00 per year only $21.58 per issue


Learn more Buy this article * Purchase on SpringerLink * Instant access to full article PDF Buy now Prices may be subject to local taxes which are calculated during checkout ADDITIONAL


ACCESS OPTIONS: * Log in * Learn about institutional subscriptions * Read our FAQs * Contact customer support Authors * Luke Fleet View author publications You can also search for this


author inPubMed Google Scholar RIGHTS AND PERMISSIONS Reprints and permissions ABOUT THIS ARTICLE CITE THIS ARTICLE Fleet, L. Topological transistor. _Nature Phys_ 11, 5 (2015).


https://doi.org/10.1038/nphys3217 Download citation * Published: 23 December 2014 * Issue Date: January 2015 * DOI: https://doi.org/10.1038/nphys3217 SHARE THIS ARTICLE Anyone you share the


following link with will be able to read this content: Get shareable link Sorry, a shareable link is not currently available for this article. Copy to clipboard Provided by the Springer


Nature SharedIt content-sharing initiative