ABSTRACT The transition metal kagome lattice materials host frustrated, correlated and topological quantum states of matter1,2,3,4,5,6,7,8,9. Recently, a new family of vanadium-based kagome

metals, AV3Sb5 (A = K, Rb or Cs), with topological band structures has been discovered10,11. These layered compounds are nonmagnetic and undergo charge density wave transitions before

developing superconductivity at low temperatures11,12,13,14,15,16,17,18,19. Here we report the observation of unconventional superconductivity and a pair density wave (PDW) in CsV3Sb5 using

scanning tunnelling microscope/spectroscopy and Josephson scanning tunnelling spectroscopy. We find that CsV3Sb5 exhibits a V-shaped pairing gap _Δ_ ~ 0.5 meV and is a strong-coupling

vortex–antivortex lattice that can account for the observed conductance modulations. Probing the electronic states in the vortex halo in an applied magnetic field, in strong field that

suppresses superconductivity and in zero field above _T_c, reveals that the PDW is a primary state responsible for an emergent pseudogap and intertwined electronic order. Our findings show

striking analogies and distinctions to the phenomenology of high-_T_c cuprate superconductors, and provide groundwork for understanding the microscopic origin of correlated electronic states

and superconductivity in vanadium-based kagome metals. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution ACCESS OPTIONS

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Contact customer support SIMILAR CONTENT BEING VIEWED BY OTHERS CONVENTIONAL SUPERCONDUCTIVITY IN THE DOPED KAGOME SUPERCONDUCTOR CS(V0.86TA0.14)3SB5 FROM VORTEX LATTICE STUDIES Article Open

access 31 July 2024 UNIDIRECTIONAL COHERENT QUASIPARTICLES IN THE HIGH-TEMPERATURE ROTATIONAL SYMMETRY BROKEN PHASE OF _A_V3SB5 KAGOME SUPERCONDUCTORS Article 09 February 2023 CASCADE OF

CORRELATED ELECTRON STATES IN THE KAGOME SUPERCONDUCTOR CSV3SB5 Article 29 September 2021 DATA AVAILABILITY Data measured or analysed during this study are available from the corresponding

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AV3Sb5 (A=Rb,Cs). _Phys. Rev. X_ 11, 031050 (2021) Download references ACKNOWLEDGEMENTS We thank I. Zeljkovic, S. Wilson, J. Yin and Z.-X. Zhao for helpful discussions. The work is supported

by grants from the National Natural Science Foundation of China (61888102, 52022105, 11974422, 51771224 and 11974394), the National Key Research and Development Projects of China

(2016YFA0202300, 2017YFA0206303, 2018YFA0305800 and 2019YFA0308500) and the Chinese Academy of Sciences (XDB28000000, XDB30000000, XDB33030100 and 112111KYSB20160061). Z.W. is supported by

the US DOE, Basic Energy Sciences grant no. DE-FG02-99ER45747.  AUTHOR INFORMATION Author notes * These authors contributed equally: Hui Chen, Haitao Yang, Bin Hu AUTHORS AND AFFILIATIONS *

Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, People’s Republic of China Hui Chen, Haitao Yang, Bin Hu, Zhen Zhao, Jie

Yuan, Yuqing Xing, Guojian Qian, Zihao Huang, Geng Li, Yuhan Ye, Sheng Ma, Shunli Ni, Hua Zhang, Chengmin Shen, Xiaoli Dong & Hong-Jun Gao * School of Physical Sciences, University of

Chinese Academy of Sciences, Beijing, People’s Republic of China Hui Chen, Haitao Yang, Bin Hu, Zhen Zhao, Jie Yuan, Yuqing Xing, Guojian Qian, Zihao Huang, Geng Li, Yuhan Ye, Sheng Ma, 

Shunli Ni, Hua Zhang, Sen Zhou, Chengmin Shen, Xiaoli Dong & Hong-Jun Gao * CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences,

Beijing, People’s Republic of China Hui Chen, Haitao Yang, Geng Li, Sen Zhou & Hong-Jun Gao * Songshan Lake Materials Laboratory, Dongguan, People’s Republic of China Hui Chen, Haitao

Yang & Hong-Jun Gao * Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, People’s

Republic of China Qiangwei Yin, Chunsheng Gong, Zhijun Tu & Hechang Lei * Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel Hengxin Tan & Binghai

Yan * CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing, People’s Republic of China Sen Zhou * Department of Physics, Boston

College, Chestnut Hill, MA, USA Ziqiang Wang Authors * Hui Chen View author publications You can also search for this author inPubMed Google Scholar * Haitao Yang View author publications

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also search for this author inPubMed Google Scholar * Hong-Jun Gao View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS H.-J.G. designed the

experiments. H.C., B.H., Y.X., G.Q., Z.H., Y.Y., C.S. and G.L. performed STM experiments with guidance from H.-J.G. and H.Y. Z.Z. and H.L.prepared samples. Q.Y., C.G. and Z.T. also

participated in sample preparation. X.D., J.Y., H.Y., S.M., H.Z. and S.N. performed the transport experiments. Z.W., S.Z., H.T. and B.Y. carried out theoretical work. All of the authors

participated in analysing experimental data, plotting figures and writing the manuscript. H.-J.G. and Z.W. supervised the project. CORRESPONDING AUTHORS Correspondence to Ziqiang Wang or

Hong-Jun Gao. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests. ADDITIONAL INFORMATION PEER REVIEW INFORMATION _Nature_ thanks the anonymous reviewers for

their contribution to the peer review of this work. PUBLISHER’S NOTE Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

EXTENDED DATA FIGURES AND TABLES EXTENDED DATA FIG. 1 DETAILED STM CHARACTERIZATION OF THE SB AND CS SURFACES. A, Top panel: a typical STM image showing a step edge of Cs surface. Bottom

panel: line profile along the white dotted arrow in A, indicating that the height of the step edge is ~0.95 nm, which is consistent with the calculated interlayer distance (_V__s_ = -1 V,

_I__t_ = 0.1 nA). B, Atomically-resolved STM image of Cs surface, showing a hexagonal lattice with a period of 1.0 nm, which is \(\surd 3\) times larger than the lattice constant

(\(a=b=\,\)0.55 nm, see Fig. S1a). (_V__s_ = -500 mV, _I__t_  = 0.5 nA). C, Atomically-resolved STM image of Sb surface, showing a honeycomb lattice. The periodicity of the honeycomb lattice

is about 0.56 nm, which agrees with the bulk lattice constant (\(a=b=\,\)0.55 nm, see Fig. S1a). (_V__s_  = -500 mV, _I__t_  = 0.5 nA). D, Atomically-resolved STM image of an interface

between the top Cs and bottom Sb surfaces (same as in Fig. 1d). The atomic model is overlaid on the image, showing that each Cs atom sits on top of the Sb honeycomb center (_V__s_ = -500 mV,

_I__t_  = 0.5 nA). E, FFT of D showing the Cs √3 × √3_R_30o reconstruction relative to the Sb 1 × 1 lattice. F, G Top panels: schematics showing STM manipulations to expose the bottom Sb

surface. Bottom panels: STM images of Cs surface before (F) and after (G) STM manipulation, respectively, showing the freshly-obtained bottom Sb surface highlighted by the white dotted

square (_V__s_ = -500 mV, _I__t_  = 0.5 nA). EXTENDED DATA FIG. 2 STM TOPOGRAPHY AND D_I/_D_V_ MAPS OVER A 40 NM × 40 NM REGION AT 300 MK. A, Topography, d_I/_d_V_ maps and the intensity of

the drift-corrected Fourier transforms at the sample bias from -2 mV to 0 mV, respectively. Each map consists of 500 pixels  ×  500 pixels. B, Energy dependence of the Fourier line cuts

along the three directions of the hexagonal zone. (_V__s_ = -5 mV, _I__t_ = 2 nA, _V__mod_ = 0.5 mV). EXTENDED DATA FIG. 3 ABSENCE OF 4_A_0/3 IN HIGH ENERGY D_I/_D_V_ MAPS AT 300 MK. A,

Large-scale STM image (60 nm  ×  60 nm) of the Sb surface obtained at the temperature below _T__c_ (300 mK), where a unidirectional charge order is visible (_V__s_ = -20 mV, _I__t_ = 2 nA).

B, The magnitude of drift-corrected Fourier transform of A, showing clearly the Q3Q-2_A_ CDW and Q1Q-4_A_ stripe CDW peaks. C, D d_I/_d_V_ mapping (1024 pixels  ×  1024 pixels) over the same

region at -20 mV and the corresponding magnitude of drift-corrected Fourier transform (_V__s_ = -20 mV, _I__t_ = 2 nA, _V__mod_ = 0.2 mV). D, F d_I/_d_V_ mapping (1024 pixels  ×  1024

pixels) over the same region at -30 mV and the corresponding magnitude of drift-corrected Fourier transform (_V__s_ = -30 mV, _I__t_ = 2 nA, _V__mod_ = 0.2 mV). EXTENDED DATA FIG. 4

SCHEMATIC ILLUSTRATION OF THE ROTON-PDW. Top panel: the roton dispersion and roton minimum at QROTON =  Q3Q-4_A_/3 in the reciprocal lattice. Bottom panel: the 3Q roton-PDW at QPDW  = 

QROTON forming a commensurate vortex-antivortex lattice (red, blue and yellow circles) that spatially modulates the tunneling conductance spectra along a line cut. EXTENDED DATA FIG. 5

SPATIAL MAP OF PSEUDOGAP AND Q3Q-4A/3 MODULATIONS. A, Spatially-averaged dI/dV spectrum obtained below Tc, exhibiting several peaks in the energy range between 1 mV and 6 mV (_V__s_ = -10

mV, _I__t_ = 1 nA, _V__mod_ = 0.05 mV). The PDW pseudogap peak located near 5 mV is labelled as _P_. B, Waterfall and color plot of a d_I_/d_V_ line cut, showing spatial modulations of the

peak _P_ (_V__s_ = -3.7 mV, _I__t_ = 1 nA, _V__mod_ = 0.05 mV). C, Spatial gap map of _∆_*(R), showing the spatial modulations of the pseudogap (_V__s_ = -3.7 mV, _I__t_ = 1 nA, _V__mod_ = 

0.05 mV). D, Fourier transform of the pseudogap map showing peaks at the PDW vectors Q3Q-4_A_/3 circled in magenta. EXTENDED DATA FIG. 6 CHARGE ORDERED NORMAL STATE IN CSV3SB5 ABOVE _T__C_.

A,B Large-scale STM topography of Sb surface obtained at 4.2 K and the magnitude of drift-corrected Fourier transform, showing 2_a_0 × 2_a_0 and 4_a_0 striped CDW peaks at wave vectors

Q3Q-2_A_ and Q1Q-4_A_ (_V__s_ = -90 mV, _I__t_ = 2 nA). C,D d_I/_d_V_ mapping of A at 20 mV and the magnitude of drift-corrected Fourier transform, respectively (_V__s_ = -90 mV, _I__t_ = 2

nA, _V__mod_ = 0.5 mV). E. Energy dependence of the Fourier line cuts along QA directions, showing that peaks at Q3Q-2_A_ and Q1Q-4_A_ at 4 K are non-dispersive (_V__s_ = -90 mV, _I__t_ = 2

nA, _V__mod_ = 0.5 mV). EXTENDED DATA FIG. 7 NORMAL STATE ANGULAR-DEPENDENT MAGNETORESISTANCE. A, Schematic of the in-plane resistance measurement under a 5 T magnetic field by rotating the

sample along c axis of the single crystal. B, Angular plot of the normalized anisotropic magnetoresistance \((\varDelta R/\,{R}_{min},\varDelta R=R(\theta )-{R}_{min})\), showing two-fold

symmetry at the temperature below ~50 K. \(\theta \) is defined in A. C, Temperature dependence of the angular-dependent of at \(\varDelta R/\,{R}_{min}\) the angle of 28°, showing the onset

of two-fold rotational symmetry below _T*_∼ 50 ± 10 K. SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Supplementary Figs. 1–16. RIGHTS AND PERMISSIONS Reprints and permissions ABOUT

THIS ARTICLE CITE THIS ARTICLE Chen, H., Yang, H., Hu, B. _et al._ Roton pair density wave in a strong-coupling kagome superconductor. _Nature_ 599, 222–228 (2021).

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