ABSTRACT In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted

electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of laser fluence. XRD studies revealed that the GaN films

deposited on porous silicon were nanocrystalline, exhibiting a hexagonal wurtzite structure along the (100) plane. Spectroscopic property results revealed that the photoluminescence PL

emission peaks of the gallium nitride over porous silicon (GaN/PSi) sample prepared at 795 mJ/mm2 were centered at 260 nm and 624 nm. According to topographical and morphological analyses,

efficiency of the photodetector at 575 nm under − 3 V were 19.86 A/W, 8.9 × 1012 Jones, and 50.89%, respectively. Furthermore, the photodetector prepared at a laser fluence of 795 mJ/mm2

demonstrates a switching characteristic, where the rise time and fall time are measured to be 363 and 711 μs, respectively. SIMILAR CONTENT BEING VIEWED BY OTHERS PREPARATION OF GAN/POROUS

SILICON HETEROJUNCTION PHOTODETECTOR BY LASER DEPOSITION TECHNIQUE Article Open access 07 September 2023 ENHANCING SIGESN NANOCRYSTALS SWIR PHOTOSENSING BY HIGH PASSIVATION IN

NANOCRYSTALLINE HFO2 MATRIX Article Open access 12 February 2024 PREPARATION OF NOVEL B4C NANOSTRUCTURE/SI PHOTODETECTORS BY LASER ABLATION IN LIQUID Article Open access 03 October 2022

INTRODUCTION The category of semiconductor materials known as III-nitrides has gained popularity in recent years due to their wide and direct band gaps, as well as their capacity to create

alloys like InGaN and AlGaN1,2,3. By adjusting the composition of these alloys, the band gap can be modified across the entire solar spectrum, from deep UV to IR4,5,6,7. GaN (gallium

nitride), in particular, possesses a broad band gap of 3.4 eV and a wurtzite hexagonal structure, which results in minimal leakage currents and enables the operation of optoelectronic

devices at elevated temperatures and frequencies8,9,10,11. GaN proves advantageous for optoelectronic applications, such as photodiodes, which find utility in diverse detection, monitoring,

and control scenarios12,13,14,15. Furthermore, these photodiodes hold great promise for advanced uses, including military, medical, display, general illumination, and environmental

monitoring applications16,17,18,19,20. Its distinctive characteristics also render GaN suitable for deployment in LEDs, solar cells, and photodetectors21,22,23,24. Several techniques,

including pulsed laser deposition, chemical vapor deposition, and molecular beam epitaxy, have demonstrated successful outcomes in producing GaN thin films. These methods share a common

objective: the fabrication of high-performance P-N and P-I-N heterojunctions within GaN films of varying thicknesses and on diverse substrates. These aspects encompass efficiency, speed,

responsivity, and minimal dark current24,25,26,27,28,29. Notably, the pulsed laser deposition method presents a straightforward protocol, generating a substantial, well-directed material

plume30,31,32,33. Additionally, it offers meticulous control over growth rate and is well-suited for generating thin films with strong adhesion on cost-effective substrates. Furthermore,

this technique enables precise regulation of thin film properties, encompassing thickness and structure34,35,36. n contemporary semiconductor manufacturing, silicon (Si) is extensively

employed due to its cost-effectiveness and compatibility with various processes. However, silicon's applicability in the infrared spectrum is limited due to its heightened reflectance

and wide band gap37,38,39. These constraints have been significantly alleviated with the advancement of porous silicon (P-Si) technology40. P-Si enhances surface area, rendering it a

suitable substrate for optoelectronic devices41. Furthermore, porous silicon (P-Si) exhibits favorable characteristics like robust room-temperature photoluminescence (PL), elevated chemical

reactivity, rapid oxidation, affordability, and a quantum confinement effect that enhances radiative transitions42,43,44,45,46. As a result, P-Si finds utility in the fabrication of various

optoelectronic devices, encompassing photodiodes, LEDs, detectors, and even biosensors47,48,49. Deposition of a film on porous silicon for photodetection applications was reported50. This

offers the advantages of a large sensitive surface area, the formation of two junctions connected in series, increased responsivity of the porous photodetector, and improved speed of

response of the photodetector. Herein, a new device has been fabricated make use the advantages of two differnt teqniques photonic cysrtal substrate and nanofilm active layer. The

fabrication of a high-performance GaN/PSi photodetector via the pulsed laser deposition method under various laser fluences has been reported. EXPERIMENTAL WORKS PREPARATION OF POROUS

SILICON SUBSTRATES Mirror-like n-type (110) Si wafers with an electrical resistivity of 1–5 mΩ/cm and a thickness of 500 μm, which were purchased from University Wafer, Inc., USA, were

utilized. Subsequently, the wafers were sectioned into rectangular pieces, each measuring 1 by 1 cm. Before initiating the photo-electrochemical etching process, the sections underwent a

thorough cleaning using an ultrasonic device in ethanol (99.9% concentration, sourced from the German Honeywell company) for a duration of 5 min. The etching process was carried out at room

temperature and involved the utilization of a diode laser (660 nm, 100 mW, from the Chinese Tongtool Company), a DC power supply with a voltage range of 0–30 V, and a digital multi-meter

(Victor Company). This process, as depicted in Fig. 1, requires the use of a Teflon cell equipped with a cathode electrode made of 95% pure platinum and an anode electrode composed of

silicon. The laser played a pivotal role in the top-down electrochemical etching technique employed for the synthesis of the porous silicon (PSi) substrates. Additionally, precise control

was maintained over the etching conditions, with a designated etching time of 10 min, a consistently upheld current density of 10 mA/cm2, and a constant concentration of hydrofluoric acid

(HF) (sourced from the German company Thomas Baker) at 24%, achieved through the use of the dilution equation51, as depicted in Eq. (1). The concentration of HF used in the etching process

was consistently maintained at 24%, and the etching time was precisely set using a digital clock for a duration of 10 min52,53,54,55,56 $$ {\text{C}}_{1} {\text{V}}_{1} = {\text{C}}_{2}

{\text{V}}_{2} $$ (1) where C1, hydrofluoric acid concentration; V1, hydrofluoric acid volume; C2, ethanol concentration. V2, ethanol volume. Upon completion of the LAECE process, all

synthesized P-Si substrates undergo a series of tests to identify the optimal outcome for varying current densities58,59,60. Structural properties were examined using X-ray diffraction (XRD)

equipment (XRD6000 Shimadzu Company) from Japan, utilizing copper radiation with a wavelength of 1.54060 Å. Morphological parameters were evaluated at a high level of detail using German

field emission scanning electron microscopy (FESEM) technology (ZEISS Company). Surface characteristics were assessed using atomic force microscopy (AFM) equipment from the TT-2 Workshop

Company in the United States. Spectroscopic features were analyzed using photoluminescence (PL) techniques from the Perkin Elmer Company in the United States of America. PREPARATION OF

GALLIUM NITRIDE PELLET A high-purity gallium nitride powder of 99.9%, purchased from Luoyang Advanced Material Company, was compressed into a pellet using a hydraulic compressor with a force

of 10 tons. The GaN pellet was subjected to ablation using a Q-switching Nd:YAG laser (RY 280, China) with varying fluences ranging from 530 to 884 mJ/mm2. The laser had a wavelength of 355

 nm and a pulse duration of 7 ns, and the ablation process was conducted under a vacuum pressure of 10–2 mbar. The deposition of the GaN film onto the PSi substrate occurred at room

temperature. The structure of the GaN film deposited on PSi was examined using an X-ray diffractometer (XRD6000, Shimadzu Company). The morphology of the deposited films was studied using

field emission scanning electron microscopy (FESEM) from ZEISS Company. The topography of the deposited films was investigated using an atomic force microscope. Furthermore, the

photoluminescence (PL) properties of the films were analyzed using a spectrophotometer from Perkin Elmer. ELECTRICAL PROPERTIES OF GAN/PSI To measure the electrical properties of the GaN/PSi

photodetector, a metal interdigitated mask was employed for establishing ohmic contacts. An aluminum film was deposited onto the GaN layer and the backside of the silicon substrate using

the thermal evaporation technique, as depicted in Fig. 2. The current–voltage characteristics of the photodetector were measured at room temperature under both dark and illuminated

conditions. This was achieved using a power supply (Dazheng 30 V, 5 A PS-305D from China) and digital multi-meters (UNI-T UT33C). Additionally, a programmable LCR meter (LCR-6100, Taiwan, GW

Instek, 10 Hz–100 kHz) was employed to evaluate the capacitance–voltage characteristics of the photodetector. FIGURES OF MERIT OF THE PHOTODETECTOR The main figures of merit of the

photodetector, namely responsivity (R), specific detectivity (D*), and external quantum efficiency (EQE) were measured using photodetector evaluation system. It is consists of monochromator

(Jobin-Yuvon), beam spilter, halogen lamp, multimeter, and silicon power meter. These measurements were conducted out under a reverse bias of 3 V. RESULTS AND DISCUSSION XRD PROPERTIES

Figure 3 depicts the XRD pattern of the PSi, revealing two peaks situated at 2θ = 33° and 68°, which correspond to the (200) and (400) planes, respectively. These two peaks are

characteristic of porous silicon and align well with findings reported previously61,62,63,64,65,66. The XRD analysis of PSi confirms the splitting of the peak at 68° into two distinct peaks,

representing crystalline silicon and porous silicon.. Figure 4 depicts the XRD pattern of GaN nanocrystalline films deposited on PSi at various laser fluences. Three peaks were observed for

all GaN films; these peaks are located at 2θ = 32.8°, 57.9°, and 61.7°, corresponding to (100), (110), and (103) planes, respectively. These peaks are indexed to GaN according to JCPDS #

01-074-0243. With an increase in laser fluence, a slight shift in 2θ was detected, and there was an observed increase in peak intensity along the (100) plane. The slight shift is attributed

to stress and strain, while the increase in peak intensity is attributed to the greater film thickness and grain size. The XRD analysis of the PSi substrate and the GaN films deposited on

PSi is presented in Tables 1 and 2, respectively. To determine the crystallite size (D), Scherrer’s formula67,68,69,70 was employed, while the interplanar distance (d) was calculated using

the formula71,72,73,74 $$ {\text{D}} = {{{\text K}\lambda }}/{\upbeta }\cos {{ \uptheta }} $$ (2) $$ {\text{d}} = {{{\text n}\lambda }}/2{ }\sin {\uptheta } $$ (3) where K is a constant set

at 0.9, λ is the wavelength of the CuKα source, β is the fullwidth at half maximum of the XRD pattern,\(\uptheta \) is the diffraction angle, and n is a positive integer. SPECTROSCOPIC

PROPERTIES The photoluminescence (PL) spectra of the PSi substrate are depicted in Fig. 5. PL measurements of the PSi substrate were conducted at room temperature with an excitation

wavelength of 280 nm. Firstly, it is observed that the prepared PSi substrate exhibits an emission peak at 589 nm, which belongs to the visible yellow band. This peak is attributed to

surface states and quantum confinement arising during the photo-electrochemical etching process, as mentioned by Wang75,76,77,78. The energy band gap of the prepared PSi substrate was

determined to be 2.1 eV, larger than the energy band gap of crystalline silicon (1.11 eV). This difference in energy band gaps can be attributed to the combined effects of quantum

confinement and increased surface states, altering the electronic structure of the material. The PL spectra of GaN nanocrystalline films prepared at different laser fluences are depicted in

Fig. 6. The PL of GaN/P-Si nanocrystalline films was measured at room temperature, and the excitation wavelength was 320 nm. The PL spectra of the GaN nanocrystalline films exhibited UV

bands located at 265.9, 267.9, 267, 260, and 260.9 nm, which are attributed to the GaN film, as well as red bands at 628.9, 621, 625.9, 624, and 625 nm, which belong to the P-Si substrate.

Increasing the laser fluence led to a decrease in the PL intensity, but there were differing opinions regarding the peak location of the PL spectrum. This discrepancy was likely due to the

higher defect density causing more non-radiative recombination. According to the PL results, the energy gaps for GaN nanofilms prepared at laser fluences of 530, 618, 707, 884, and 795 

mJ/mm2 are 3.45, 3.38, 3.36, 3.34, and 3.44 eV, respectively, which are in agreement with the reported data58,79,80,81. SURFACE TOPOGRAPHY AFM Figure 7 a,b depicts the 3D AFM images and the

grain size distribution of P-Si substrate etched. In contrast, after 10 min of etching, the pores formed uniformly throughout the entire surface, taking on a more elongated oval shape. Table

3 provides the AFM parameters of a prepared P-Si substrate. Most notably, nanometer-scale research into particle size distribution was conducted on the P-Si substrate after preparation. To

analyze and characterize the topography of the prepared GaN nano-crystalline films over a PSi substrate, Fig. 8 depicts three-dimensional AFM images and grain size distribution. Average

particle diameter and average surface roughness increased as laser Fluence increased from 530 to 884 mJ/mm2, but they decreased at 884 mJ/mm2, as demonstrated in Table 4. The AFM image of

the GaN nanocrystalline film shows the uniform deposition of samples created with 795 mJ/mm2 laser Fluence and the largest average particle diameter and average surface roughness. SURFACE

MORPHOLOGY FESEM Figure 9a and b depicts FE-SEM images of the surface and cross-section, respectively, of the PSi substrates, offering insights into the surface morphology. According to the

research conducted by Omar et al.67, the pores on the surface exhibit a star-like appearance and maintain an elongated shape across the entire surface. This is attributed to the use of

n-type silicon (100) with low resistivity during the preparation of the PSi82,83,84,85. Furthermore, the FE-SEM cross-sectional image revealed that the thickness of the P-Si layer measures

36.02 μm. Figure 10 depicts FE-SEM images of GaN/PSi nanostructures produced using PLD at varying laser intensities. This study revealed that the thickness of the GaN nanocrystalline film

produced with a laser fluence of 795 mJ/mm2 during the PLD process measures approximately 383.36 nm, which is comparable to the thickness of the GaN nanostructures themselves. The surface

morphology of the GaN films was analyzed using micro- and nano-scale techniques. As depicted in Fig. 11, the average diameter of GaN/PSi nanostructures created with different laser fluences

was calculated through ImageJ analysis. Furthermore, the GaN nano-crystalline films fully covered the P-Si substrate, resulting in uniform and homogeneously-sized spherical particles with a

cauliflower-like shape. ELECTRICAL PROPERTIES At room temperature, the dark current–voltage characteristic of the prepared P-Si substrate was analyzed in the dark, as depicted in Fig. 12A.

As the voltage was applied, the current flowing through the P-Si substrate increased due to the elevated resistance of the P-Si layer with increasing voltage86,87. Moreover, the charge

transfer led to the formation of a depletion zone in the prepared P-Si substrate close to the electrical dipole, resulting in a rectifying characteristic88,89,90. Figure 12B depicts the

capacitance–voltage characteristic for applied voltages ranging from 0 to 3 V. The capacitance of the prepared P-Si substrate decreased. This phenomenon has been coined as the “growing

depletion region with increasing built-in potential”57,91,92,93,94.was coined to describe this phenomenon. The relationship between 1/C2 and the voltage on the fabricated P-Si substrate is

depicted in Fig. 12C. C2 exhibits a linear relationship with voltage. Figure 12C shows the correlation between 1/C2 and voltage on a prepared PSi substrate. a linear relationship with

voltage. The built-in potential was determined by extending the given linear segment of the curve to a 1/C2 value of 0 points. There was an inherent potential of 0.34 eV. Figure 13 depicts

the dark I–V characteristics of GaN nanocrystalline films fabricated on a P-Si substrate using the PLD method at various laser fluences and at room temperature. As the bias voltage was

increased, the GaN nano-crystalline film created at 795 mJ/mm2 exhibited expansion due to the narrowing of the depletion layer95,96. Furthermore, rectification features were observed in the

GaN/P-Si nanocrystalline film, and recombination tunneling served as the current transport mechanism in both layers97,98,99. PERFORMANCE CHARACTERIZATION OF GAN NANOSTRUCTURE WITH OPTIMUM

LASER FLUENCE The performance properties of the fabricated GaN/PSi heterojunction using the PLD method with optimal laser parameters (355 nm laser wavelength and 300 °C substrate

temperature) at different laser fluences were determined, and they are illustrated in Figs. 15, 16, 17 and 18. The study concluded that a laser Fluence value of 795 mJ/mm2 was optimal. The

responsivity (Rλ), specific detectivity (Dλ), and external quantum efficiency (EQE) of the produced GaN nano-crystalline film were assessed. Responsivity (Rλ) can be calculated using Eq. 

(4)57,96,100,101, which stands as a significant figure of merit. Both Eqs. (5) and (6)102,103,104,105 represent detectivity (D*) and external quantum efficiency (EQE), respectively $$

{\text{R}}_{{\uplambda }} = \frac{{{\text{I}}_{{{\text{ph}}}} }}{{\text{P}}} $$ (4) Iph is the photocurrent (Ampere), and P is the incident power (Watt)106,107. $$ {\text{D}}_{{\uplambda

}}^{*} = \frac{{{\text{R}}_{{\uplambda }} {\text{A}}^{1/2} }}{{\sqrt {2{\text{qI}}_{{{\text{dark}}}} } }} $$ (5) where A is the area of photodetector, \({\mathrm{I}}_{\mathrm{dark}}\) is the

dark current of photodetector, and q is the electron charge108,109,110,111. $$ {\text{EQE}} = \frac{{1240{\text{ R}}_{{\uplambda }} }}{{\lambda_{nm} }} $$ (6) Figure 14 depicts the

responsivity of the structure when subjected to varying laser intensities operating between 350 and 850 nm. Three response peaks of 29.010 A/W at 370 nm and 22.761 A/W at 550 nm were

observed in the fabricated GaN on P-Si nanostructure at 795 mJ/mm2, which can be attributed to the larger surface area, extended depletion layer width, and increased minority carrier

diffusion length112. Figure 15 depicts variation of detectivity (D*) with wavelength of the GaN/P-Si photodetectors. Two peaks were observed at 355 nm and 550 nm. Figure 16 depicts the EQE

of GaN/PSi photodetectors fabricated at various laser fluences. Among these, the photodetector fabricated at 795 mJ/mm2 achieved the highest EQE values: 93.240% at 370 nm and 51.30% at 550 

nm. The GaN/PSi heterojunction photodetector fabricated at 795 mJ/mm2 demonstrated a high EQE due to the direct relationship with Eq. (6), driven by its strong spectral response. Enhancing

the reverse bias voltage can improve the collection efficiency of photogenerated carriers, allowing for the creation of a fully depleted photodetector113,114. Figures 17 and 18 depict the

dynamic photoresponse switching of the photodetectors deposited at various laser fluences. Three distinct switching cycles were conducted, each with an 18-s off period followed by a 25-s on

period. Rise and fall times of the fabricated GaN/P-Si nanostructure were measured from 10 to 90% of the peak signal and from 90 to 10% of the peak signal, respectively. The photodetector

prepared with a laser fluence of 795 mJ/mm2 exhibits a switching characteristic, with a measured rise time of 363 μs and a fall time of 711 μs. The fabricated GaN/P-Si nanocrystalline film

at 795 mJ/mm2 exhibited the best performance, with a responsivity of 29.010 A/W at 370 nm, a detectivity of 8.61 × 1012 Jones, and an external quantum efficiency of 93.240%. Additionally, it

demonstrated a fast response rise time of 328 and a fall time of 617, outperforming Jiang et al. (2022), who fabricated a GaN/Si UV photodetector using a chemical vapor deposition process.

Their device showed a responsivity of 71.4 mA/W, detectivity of 7.1 × 108 Jones, external quantum efficiency of 24.3%, and a response time of 0.2/7.6 s115. Table 5 provides a summary of the

figures of merit for the GaN/PSi photodetectors fabricated at various laser fluences. CONCLUSION Nanostructured GaN/PSi photodetectors were successfully fabricated using the pulsed laser

deposition method at various laser fluences. The GaN nanostructure film deposited at 795 mJ/mm2 exhibited high crystalline peaks with a large crystallite size, indicating favorable

structural characteristics. Spectroscopically, this film exhibited a shorter wavelength of 260 nm and a high energy gap of 4.76 eV. Morphologically, the film showed uniform, homogeneous

spherical particles resembling cauliflower, with a thickness of 383.36 nm. Additionally, a uniform deposition yielded the largest average particle diameter (178.8 nm) and average surface

roughness (50.61 nm). Furthermore, performance characteristics were assessed for GaN nanostructures prepared using a laser fluence of 795 mJ/mm2. Due to the energy gap of GaN material, the

responsivity under 3 V exhibited maximum values: responsivity of approximately 29.03 A/W, detectivity of 8.6 × 1012 Jones, and an external quantum efficiency of 97.2% at 370 nm. Similarly,

at 575 nm, the responsivity measured around 19.86 A/W, detectivity of 8.9 × 1012 Jones, and an external quantum efficiency of 50.89%. Additionally, three switching cycles with an 18-s off

period and a 25-s on period were illuminated with a power of 100 mW/cm2. The rise time of the fabricated GaN/P-Si nanostructure was 328 μs, while the fall time was 617 μs. A strong

correlation was observed between the optimum laser Fluence (795 mJ/mm2) and the achieved GaN nanostructure performance characteristics. DATA AVAILABILITY Correspondence and requests for

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ACKNOWLEDGEMENTS The authors would like to thank the University of Technology-Iraq for the logistic support this work. The authors extend their appreciation to the Deanship of Scientific

Research at Northern Border University, Arar, KSA for support this research work through the project number “NBU-FFR-2023-0139. The authors gratefully thank the Prince Faisal bin Khalid bin

Sultan Research Chair in Renewable Energy Studies and Applications (PFCRE) at Northern Border University for their support and assistance. The authors would like to thank Al-Farahidi

University, Baghdad, Iraq for the logistic support this work. AUTHOR INFORMATION AUTHORS AND AFFILIATIONS * Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq

Makram A. Fakhri, Haneen D. Jabbar & Mohammed Jalal AbdulRazzaq * Applied Science Department, University of Technology-Iraq, Baghdad, Iraq Evan T. Salim & Raid A. Ismail * Electrical

Engineering Department, Northern Border University, Arar, Kingdom of Saudi Arabia Ahmad S. Azzahrani * AlFarahidi University, Baghdad, Iraq Raed Khalid Ibrahim Authors * Makram A. Fakhri

View author publications You can also search for this author inPubMed Google Scholar * Haneen D. Jabbar View author publications You can also search for this author inPubMed Google Scholar *

Mohammed Jalal AbdulRazzaq View author publications You can also search for this author inPubMed Google Scholar * Evan T. Salim View author publications You can also search for this author

inPubMed Google Scholar * Ahmad S. Azzahrani View author publications You can also search for this author inPubMed Google Scholar * Raed Khalid Ibrahim View author publications You can also

search for this author inPubMed Google Scholar * Raid A. Ismail View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS M.A.F., H.D.J., M.J.A.,

E.T.S., A.S.A., R.K.I., R.A.I., conceptualization, M.A.F., H.D.J., M.J.A., E.T.S; methodology, M.A.F., H.D.J., M.J.A., E.T.S; validation, M.A F., E.T.S., A.S.A., R.K.I., R.A.I.; formal

analysis, M.A.F., H.D.J., M.J.A., E.T.S.; investigation, M.A.F., H.D.J., E.T.S., A.S.A., R.K.I., R.A.I.; resources, M.A.F., E.T.S., A.S.A., R.K.I., R.A.I.; data curation, M.A.F., H.D.J.,

E.T.S.; writing—original draft preparation, H.D.J.; writing—review and editing, M.A.F., M.J.A., E.T.S., A.S.A., R.K.I., R.A.I.; visualization, M.A.F., H.D.J., M.J.A., E.T.S., A.S.A., R.K.I.,

R.A.I.; supervision, M.A.F., M.J.A.; project administration, M.A.F., M.J.A., E.T.S.; funding acquisition, A.S.A., all authors have read and agreed to the published version of the

manuscript. CORRESPONDING AUTHORS Correspondence to Makram A. Fakhri, Evan T. Salim or Ahmad S. Azzahrani. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests.

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M.A., Jabbar, H.D., AbdulRazzaq, M.J. _et al._ Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition. _Sci Rep_

13, 21007 (2023). https://doi.org/10.1038/s41598-023-47955-3 Download citation * Received: 18 September 2023 * Accepted: 20 November 2023 * Published: 29 November 2023 * DOI:

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