ABSTRACT The large-area transfer of two-dimensional (2D) materials from their growth substrate is crucial for electronic device integration. However, it is easy to damage sub-1-nm thick

materials, and existing transfer methods typically involve a trade-off in terms of lateral size, quality and accuracy. Here we report a mass transfer printing technology that uses a

polydimethylsiloxane stamp patterned with precisely arranged micro-posts to gently transfer wafer-level 2D arrays and to stack van der Waals heterostructure arrays. After the stamp is

brought into contact with the 2D material, an ethanol–water solution is added, which penetrates the 2D material–growth substrate interface between the non-contact regions of the stamp and

yield of around 97.9% (back gate) and nearly damage-free electrical properties (top and bottom gate). We also develop a capillary force-assisted transfer model to explain the rapid transfer

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CONTENT BEING VIEWED BY OTHERS WAFER-SCALE INTEGRATION OF TRANSITION METAL DICHALCOGENIDE FIELD-EFFECT TRANSISTORS USING ADHESION LITHOGRAPHY Article 21 December 2022 HIGHLY REPRODUCIBLE VAN

DER WAALS INTEGRATION OF TWO-DIMENSIONAL ELECTRONICS ON THE WAFER SCALE Article 20 March 2023 AUTOMATED PROCESSING AND TRANSFER OF TWO-DIMENSIONAL MATERIALS WITH ROBOTICS Article 23 May

2025 DATA AVAILABILITY Source data are provided with this paper. All other data that support the findings of this study are available from the corresponding authors upon reasonable request.

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ACKNOWLEDGEMENTS This work was supported by the State Key Research and Development Program of China (grant no. 2022YFB3603902) and National Natural Science Foundation of China (grant no.

62004042). We acknowledge N. Sheng Xu and S. Deng for the valuable advice on thesis writing. AUTHOR INFORMATION Author notes * These authors contributed equally: Liwei Liu, Zhenggang Cai.

AUTHORS AND AFFILIATIONS * Frontier Institute of Chip and System, Fudan University, Shanghai, China Liwei Liu * State Key Laboratory of ASIC and System, School of Microelectronics, Fudan

University, Shanghai, China Zhenggang Cai, Siwei Xue, Sifan Chen, Saifei Gou, Zhejia Zhang, Yiming Guo, Yusheng Yao, Wenzhong Bao & Peng Zhou * State Key Laboratory of Photovoltaic

Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan

University, Shanghai, China Hai Huang Authors * Liwei Liu View author publications You can also search for this author inPubMed Google Scholar * Zhenggang Cai View author publications You

can also search for this author inPubMed Google Scholar * Siwei Xue View author publications You can also search for this author inPubMed Google Scholar * Hai Huang View author publications

You can also search for this author inPubMed Google Scholar * Sifan Chen View author publications You can also search for this author inPubMed Google Scholar * Saifei Gou View author

publications You can also search for this author inPubMed Google Scholar * Zhejia Zhang View author publications You can also search for this author inPubMed Google Scholar * Yiming Guo View

author publications You can also search for this author inPubMed Google Scholar * Yusheng Yao View author publications You can also search for this author inPubMed Google Scholar * Wenzhong

Bao View author publications You can also search for this author inPubMed Google Scholar * Peng Zhou View author publications You can also search for this author inPubMed Google Scholar

CONTRIBUTIONS L.L. and P.Z. conceived the idea and initiated the present study. L.L., Z.C. and S.X. carried out the experiments and analysed the data. S.C., H.H., S.G., Y.G. and Z.Z. helped

fabricate the MoS2-FETs arrays. Y.Y. assisted in performing the Raman spectroscopy tests. L.L. wrote the paper. W.B. and P. Z. contributed to discussions and paper revision. CORRESPONDING

AUTHORS Correspondence to Liwei Liu, Wenzhong Bao or Peng Zhou. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests. PEER REVIEW PEER REVIEW INFORMATION

_Nature Electronics_ thanks Jiayang Wu, Cheng-Yan Xu and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. ADDITIONAL INFORMATION PUBLISHER’S NOTE

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Supplementary Figs.

1–36 and Table 1. SUPPLEMENTARY VIDEO 1 Transferred MoS2 arrays. SUPPLEMENTARY VIDEO 2 Transfer of 2D film. SUPPLEMENTARY VIDEO 3 Mixture solution penetrates along the non-contact regions

rapidly. SOURCE DATA SOURCE DATA FIG. 1 Statistical source data from Fig. 1h,i. SOURCE DATA FIG. 2 Statistical source data from Fig. 2q–s. SOURCE DATA FIG. 4 Statistical source data from

Fig. 4b,c,e,f,h,i. SOURCE DATA FIG. 5 Statistical source data from Fig. 5c,d. RIGHTS AND PERMISSIONS Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights

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