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The large-area transfer of two-dimensional (2D) materials from their growth substrate is crucial for electronic device integration. However, it is easy to damage sub-1-nm thick materials,
and existing transfer methods typically involve a trade-off in terms of lateral size, quality and accuracy. Here we report a mass transfer printing technology that uses a
polydimethylsiloxane stamp patterned with precisely arranged micro-posts to gently transfer wafer-level 2D arrays and to stack van der Waals heterostructure arrays. After the stamp is
brought into contact with the 2D material, an ethanol–water solution is added, which penetrates the 2D material–growth substrate interface between the non-contact regions of the stamp and
causes the film to delaminate. We use the approach to transfer a 2-inch (~5 cm) monolayer molybdenum disulfide film containing more than 1,000,000 arrays with lateral dimensions of 20 × 20
µm2, a density of 62,500 arrays per cm2 and a yield of 99% in a single operation. Integrated 2D transistors with different device architectures created with the technology show a device
yield of around 97.9% (back gate) and nearly damage-free electrical properties (top and bottom gate). We also develop a capillary force-assisted transfer model to explain the rapid transfer
mechanism.
Source data are provided with this paper. All other data that support the findings of this study are available from the corresponding authors upon reasonable request.
This work was supported by the State Key Research and Development Program of China (grant no. 2022YFB3603902) and National Natural Science Foundation of China (grant no. 62004042). We
acknowledge N. Sheng Xu and S. Deng for the valuable advice on thesis writing.
These authors contributed equally: Liwei Liu, Zhenggang Cai.
Frontier Institute of Chip and System, Fudan University, Shanghai, China
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
Zhenggang Cai, Siwei Xue, Sifan Chen, Saifei Gou, Zhejia Zhang, Yiming Guo, Yusheng Yao, Wenzhong Bao & Peng Zhou
State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department
of Material Science, Fudan University, Shanghai, China
L.L. and P.Z. conceived the idea and initiated the present study. L.L., Z.C. and S.X. carried out the experiments and analysed the data. S.C., H.H., S.G., Y.G. and Z.Z. helped fabricate the
MoS2-FETs arrays. Y.Y. assisted in performing the Raman spectroscopy tests. L.L. wrote the paper. W.B. and P. Z. contributed to discussions and paper revision.
Nature Electronics thanks Jiayang Wu, Cheng-Yan Xu and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Mixture solution penetrates along the non-contact regions rapidly.
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