ABSTRACT Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk

materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal

dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO2) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as

a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi2SeO5) can be conformally

thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO2. The Bi2SeO5 can also be selectively etched away by a wet chemical method that leaves the mobility

of the underlying Bi2O2Se semiconductor almost unchanged. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution ACCESS

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Read our FAQs * Contact customer support SIMILAR CONTENT BEING VIEWED BY OTHERS A SINGLE-CRYSTALLINE NATIVE DIELECTRIC FOR TWO-DIMENSIONAL SEMICONDUCTORS WITH AN EQUIVALENT OXIDE THICKNESS

BELOW 0.5 NM Article 15 September 2022 SINGLE-CRYSTALLINE VAN DER WAALS LAYERED DIELECTRIC WITH HIGH DIELECTRIC CONSTANT Article 09 March 2023 SCALABLE INTEGRATION OF HYBRID HIGH-_Κ_

DIELECTRIC MATERIALS ON TWO-DIMENSIONAL SEMICONDUCTORS Article 03 August 2023 DATA AVAILABILITY The data that support the plots within this paper and other findings of this study are

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thank G.F. Dong for her help and discussions in measuring dielectric properties. We acknowledge financial support from the National Natural Science Foundation of China (21733001, 21525310,

51672007 and 11974023) and the National Basic Research Program of China (2016YFA0200101). P.G. also acknowledges support from the Key Area R&D Program of Guangdong Province

(2018B010109009) and the Key R&D Program of Guangdong Province (2018B030327001). J.Y. and K.L. were supported by the US Department of Energy (DOE), Office of Science, Basic Energy

Sciences (award no. DE-SC0019025). AUTHOR INFORMATION Author notes * These authors contributed equally: Tianran Li, Teng Tu. AUTHORS AND AFFILIATIONS * Center for Nanochemistry, Beijing

Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China Tianran

Li, Teng Tu, Jinxiong Wu, Yan Liang, Yichi Zhang, Congcong Zhang, Yumin Dai & Hailin Peng * Electron Microscopy Laboratory, School of Physics and International Center for Quantum

Materials, Peking University, Beijing, China Yuanwei Sun & Peng Gao * Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel Huixia Fu & Binghai Yan *

Department of Physics, University of Texas at Austin, Austin, TX, USA Jia Yu & Keji Lai * Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of

Education, Department of Chemistry, Tsinghua University, Beijing, China Lei Xing, Ziang Wang & Liying Jiao * Key Laboratory of Microelectronic Devices and Circuits, Institute of

Microelectronics, Peking University, Beijing, China Huimin Wang, Rundong Jia, Ming Li & Ru Huang * Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and

Inorganic Functional Materials, School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, China Jinxiong Wu * Academy for Advanced

Interdisciplinary Studies, Peking University, Beijing, China Congwei Tan * Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University,

Beijing, China Chenguang Qiu * Collaborative Innovation Centre of Quantum Matter, Beijing, China Peng Gao Authors * Tianran Li View author publications You can also search for this author

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Google Scholar * Hailin Peng View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS H.P. conceived the original idea for the project. T.T. carried

out the synthesis and structural characterizations of the bulk and 2D crystals. The devices were fabricated and measured by T.L., with help from L.X., Z.W., H.W. and R.J. H.F. and B.Y.

carried out the theoretical calculations. The scanning transmission electron microscopy measurements were performed by Y.S. under the direction of P.G. MIM was performed by J.Y. under the

supervision of K.L. The manuscript was written by H.P., T.L., T.T. and J.W. with input from the other authors. All work was supervised by H.P. All authors contributed to the scientific

planning and discussions. CORRESPONDING AUTHOR Correspondence to Hailin Peng. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests. ADDITIONAL INFORMATION

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two-dimensional electronics. _Nat Electron_ 3, 473–478 (2020). https://doi.org/10.1038/s41928-020-0444-6 Download citation * Received: 08 October 2019 * Accepted: 22 June 2020 * Published:

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