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ABSTRACT Sensors that are capable of three-dimensional detection of depth field information in the spatial domain are of potential use in applications such as robotics, satellite imaging and
medical assistance. However, current techniques require a precise light source for complex phase detection and diffraction, or involve static multidirectional reflection imaging. Here we
report a reconfigurable heterostructure transistor array for monocular three-dimensional parallax reconstruction. The phototransistors are based on heterostructures of indium gallium zinc
oxide and tungsten diselenide, and can operate as n-type, p-type or ambipolar transistors depending on electrostatic modulation. The arrays can be switched between two modes: a real-time
constant perception mode for static imaging and a spatiotemporal planar configuration mode with memory for dynamic imaging. To switch between the modes, the dominant carrier polarity is
changed via a complementary metal–oxide–semiconductor-compatible multiterminal addressing architecture. We show that the system can be used for three-dimensional morphology reconstruction,
two-dimensional depth field mapping and multi-view coupling. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution ACCESS
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Read our FAQs * Contact customer support SIMILAR CONTENT BEING VIEWED BY OTHERS A UNIVERSAL 3D IMAGING SENSOR ON A SILICON PHOTONICS PLATFORM Article 10 February 2021 HOLOBRICKS: MODULAR
COARSE INTEGRAL HOLOGRAPHIC DISPLAYS Article Open access 16 March 2022 PARALLELIZING ANALOG IN-SENSOR VISUAL PROCESSING WITH ARRAYS OF GATE-TUNABLE SILICON PHOTODETECTORS Article Open access
21 May 2025 DATA AVAILABILITY The data that support the findings of this study are available via Figshare at https://doi.org/10.6084/m9.figshare.26764015 (ref. 41). Source data are provided
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1988). * Li, Z. Source data. _Figshare_ https://doi.org/10.6084/m9.figshare.26764015 (2024). Download references ACKNOWLEDGEMENTS This work was supported by the National Natural Science
Foundation of China (grant nos. 62422409, 62174152 and 62374159). The authors acknowledge financial support from Open Fund of State Key Laboratory of Infrared Physics (grant no.
SITP-NLIST-YB-2024-04) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (grant no. 2020115). Thanks to J. Chang (Institute of Semiconductors, CAS) for
technical guidance of etching process and thanks to J. Chen (Institute of Semiconductors, CAS) for technical guidance of spectrum characterization. AUTHOR INFORMATION AUTHORS AND
AFFILIATIONS * State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Zhexin Li, Hao Xu, Yiqiang Zheng, Lingchen
Liu, Linlin Li, Zheng Lou & Lili Wang * Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, China Zhexin Li, Lingchen Liu,
Linlin Li, Zheng Lou & Lili Wang Authors * Zhexin Li View author publications You can also search for this author inPubMed Google Scholar * Hao Xu View author publications You can also
search for this author inPubMed Google Scholar * Yiqiang Zheng View author publications You can also search for this author inPubMed Google Scholar * Lingchen Liu View author publications
You can also search for this author inPubMed Google Scholar * Linlin Li View author publications You can also search for this author inPubMed Google Scholar * Zheng Lou View author
publications You can also search for this author inPubMed Google Scholar * Lili Wang View author publications You can also search for this author inPubMed Google Scholar CONTRIBUTIONS Z. Li,
Z. Lou and L.W. designed the research, Z. Li and L.W. wrote the paper, Z. Li, H.X., Y.Z., L. Liu and L. Li performed the experiments, Z. Li and L. Li performed the first-principles
calculations and simulation. Z. Li, L. Liu and Z. Lou analysed the data. Z. Lou and L.W. revised the paper, Z. Lou and L.W. supervised the project. All authors contributed to research and
reviewed the manuscript. CORRESPONDING AUTHORS Correspondence to Zheng Lou or Lili Wang. ETHICS DECLARATIONS COMPETING INTERESTS The authors declare no competing interests. PEER REVIEW PEER
REVIEW INFORMATION _Nature Electronics_ thanks Jongchan Park and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. ADDITIONAL INFORMATION PUBLISHER’S
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Notes 1–4, Figs. 1–26 and Tables 1 and 2. SUPPLEMENTARY DATA Source data for supplementary figures. SOURCE DATA SOURCE DATA FIGS. 1–4 Statistical source data. RIGHTS AND PERMISSIONS Springer
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CITE THIS ARTICLE Li, Z., Xu, H., Zheng, Y. _et al._ A reconfigurable heterostructure transistor array for monocular 3D parallax reconstruction. _Nat Electron_ 8, 46–55 (2025).
https://doi.org/10.1038/s41928-024-01261-6 Download citation * Received: 14 November 2023 * Accepted: 16 September 2024 * Published: 10 January 2025 * Issue Date: January 2025 * DOI:
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